Short Papers__ Simulation of HEMT DC Drain Current and 1 to 50 GHz S-Parameters as a Function of Gate Bias

IEEE Transactions on Microwave Theory and Techniques

Volumn 41, Issue 6, 1993, Pages 1065-1067

  Mahon, Simon J ^a   Chivers, Michael J ^b  

^a MACQUARIE UNIVERSITY   (Australia)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE SCATTERING; GATES (TRANSISTOR); MICROWAVE MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE;

HEMT DC DRAIN CURRENT; HEMT WAFER STRUCTURE; SEMI-PHYSICAL HEMT MODEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0027614597     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.238526     Document Type: Article

References (3)

1. S. J. Mahon, D. J. Skellern, and F. Green, “A technique for modeling s-parameters for HEMT structures as a function of gate bias,” IEEE Microwave Theory Tech., vol. 40. no. 7. pp. 1430-1440. July 1992.
2. S. J. Mahon and D. J. Skellern, “Determination of device structure from GaAs/AlGaAs HEMT dc I-V characteristic curves,” IEEE Trans. Electron Devices, vol. 39, no. 5, pp. 1041-1049, May 1992.
3. P. R. de la Houssaye, D. R. Allee, Y.-C. Pao, D. G. Schlom, I. S. Harris, and R. F. W. Pease, “Electron saturation velocity variation in InGaAs and GaAs-channel MODFETs for gate lengths to 550 å,” IEEE Elect.Dev. Lett., vol. EDL-9, no. 3, pp. 148-150, Mar. 1988.