Neutral base recombination and its influence on the temperature dependence of early voltage and current gain-early voltage product in UHV/CVD sige heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 44, Issue 3, 1997, Pages 404-413

  Joseph, Alvin J ^a   Cressler, John D ^a   Richey, David M ^a   Jaeger, Richard C ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; COOLING; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES;

CURRENT GAIN; NEUTRAL BASE RECOMBINATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031104183     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.556150     Document Type: Article

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