Influence of Lattice Self-Heating and Hot-Carrier Transport on Device Performance

IEEE Transactions on Electron Devices

Volumn 41, Issue 12, 1994, Pages 2391-2398

  Liang, Minchang ^a   Law, Mark E ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CRYSTAL LATTICES; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; MOS DEVICES; SIMULATORS; THERMODYNAMIC PROPERTIES;

CARRIER ENERGY TRANSPORT EQUATIONS; DRIFT DIFFUSION TRANSPORT MODELS; FLORIDA OBJECT ORIENTED DEVICE SIMULATORS; LATTICE SELF HEATING;

SEMICONDUCTOR DEVICE MODELS;

EID: 0028751998     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.337454     Document Type: Article

References (15)

1. Robert M. Fox and Sang-Gug Lee, “Scalable small-signal model for BJT self-heating,” IEEE Electron Device Lett., vol. 12, pp. 649–651, 1991.
2. Mark A. Stettler, Muhammad A. Alam, and Mark Lannstrom, “A critical examination of the assumptions underlying macroscopic transport equations for silicon devices,” IEEE Trans. Electron Devices, vol. 40, pp. 733–740, 1993.
3. Minchang Liang and Mark E. Law, “An object oriented approach to device simulation—FLOODS,” IEEE Trans. Comp.-Aided Design, to be published.
4. W. Lee et al., “Numerical modeling of advanced semiconductor devices,” IBM J. Res. Develop., vol. 36, pp. 208–230, 1992.
5. C. J. Glasbrenner and G. A. Slack, “Thermal conductivity of silicon and Germanium from 3 K to the melting point,” Phys. Rev., vol. 134, no. 4A, pp. A1058–1069, 1964.
6. Minchang Liang, “Composite thermodynamic system for advanced device simulation,” Ph.D. Dissertation, Chap. 4, Aug. 1994.
7. G. K. Wachutka, “Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling,” IEEE Trans. Comp.-Aided Design, vol. 9, pp. 1141–1149, 1990.
8. Robert K. Cook, “Numerical simulation of hot-carrier transport in silicon bipolar transistor,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1103–1110, 1983.
9. D. B. M. Klaassen, “A unified mobility model for device simulation—I. Model equations and concentration dependence,” Solid-State Electron., vol. 35, pp. 953–959, 1992.
10. D. B. M. Klaassen, “A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime,” Solid-State Electron., vol. 35, pp. 961–967, 1992.
11. Hsin-Hsiung Ou and Ting-Wei Tang, “Numerical modeling of hot carriers in submicrometer silicon BJT’s,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1533–1539, 1987.
12. P. J. Zdebel, R. J. Baida, B. V. Hwang, V. del la Torre, and A. Wagner, “MOSAIC-III—A high performance bipolar technology with advanced self-aligned devices,” Proc. Bipolar Circuits and Technol. Meet., p. 172, 1987.
13. Sang-Gug Lee, “Predictive modeling of high-current output resistance and thermal effects in bipolar junction transistor,” Ph.D. dissertation, Univ. Florida, 1992.
14. D. Chen et al., “Dual energy transport model with coupled lattice and carrier temperatures,” Simulation of Semiconductor Devices And Processes, vol. 5, pp. 157–160, 1993.
15. E. Scholl and W. Quade, “Effect of impact ionization on hot-carrier energy and momentum relaxation in semiconductor,” J. Phys. C: Solid-State Phys., vol. 20, pp. L861, 1987