Output Conductance of Bipolar Transistors with Large Neutral-Base Recombination Current

IEEE Transactions on Electron Devices

Volumn 39, Issue 11, 1992, Pages 2569-2575

  McGregor, Joel M ^a   Roulston, David J ^b   Noel J P ^c   Houghton, D C ^c  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^b UNIVERSITY OF WATERLOO   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; COMPUTER SIMULATION; HETEROJUNCTIONS; MATHEMATICAL MODELS;

DOUBLE-HETEROSTRUCTURE BIPOLAR TRANSISTORS; NEUTRAL BASE RECOMBINATION CURRENT; OUTPUT CONDUCTANCE;

BIPOLAR TRANSISTORS;

EID: 0026954175     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.163465     Document Type: Article

References (19)

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