Novel collector current phenomenon in advanced bipolar transistors operated at deep cryogenic temperatures

Annual Device Research Conference Digest

Volumn , Issue , 1995, Pages 162-163

  Joseph, Alvin J ^a   Cressler, John D ^a   Richey, David M ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYOGENICS; DIGITAL TO ANALOG CONVERSION; ELECTRON TUNNELING; ELECTRONS; HETEROJUNCTIONS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TEMPERATURE; TRANSCONDUCTANCE;

CRYOGENIC TEMPERATURE; DEEP CRYOGENIC TEMPERATURE; HETEROJUNCTION BIPOLAR TRANSISTOR; LIQUID NITROGEN TEMPERATURE; ONE DIMENSIONAL SIMULATOR;

BIPOLAR TRANSISTORS;

EID: 0029533870     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)