Experimental Study of Algaas/Gaas Hbt Device Design for Power Applications

IEEE Electron Device Letters

Volumn 12, Issue 11, 1991, Pages 581-583

  Hafizi, Madjid ^a   Streit, Dwight C ^a   Tran, Liem T ^a   Kobayashi, Kevin W ^a   Umemoto, Donald K ^a   Oki, Aaron K ^a   Wang, Shing K ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS, POWER SUPPLY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

BASE-EMITTER JUNCTIONS;

TRANSISTORS, BIPOLAR;

EID: 0026254853     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.119204     Document Type: Article

References (9)

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2. B. Bayraktaroglu, R. D. Hudgens, M. A. Khatibzadeh, and H. Q. Tserng, “2.5 W CW X-band heterojunction bipolar transistor,” in IEEE MTT-S Int. Microwave Symp. Dig., 1989, pp. 1057–1060.
3. S. I. Long, “A comparison of the GaAs MESFET and the AlGaAs/GaAs heterojunction bipolar transistor for power microwave amplification,” IEEE Trans. Electron Devices, vol. 36, pp. 1274–1278, July 1989.
4. A. K. Oki, M. E. Kim, G. M. Gorman, and J. B. Camou, “High-performance GaAs heterojunction bipolar transistor monolithic logarithmic IF amplifiers,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1958–1965, 1988.
5. J. J. Chen, G. B. Gao, J. I. Chyi, and H. Morkoç, “Breakdown behavior of GaAs/AlGaAs HBT's,” IEEE Trans. Electron Devices, vol. 36, pp. 2165–2172, Oct. 1989.
6. P. F. Lu, J. H. Comfort, D. D. Tang, B. S. Meyerson, and J. Y. C. Sun, “The implementation of a reduced-field profile design for high-performance bipolar transistors,” IEEE Electron Device Lett., vol. 11, pp. 336–338, Aug. 1990.
7. J. A. Higgins, “Heterojunction bipolar transistors for high efficiency power amplifiers,” in IEEE GaAs IC Symp. Dig., 1988, pp. 33–36.
8. D. C. Streit et al., “Effect of exponentially-graded base doping on the performance of GaAs/AlGaAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 12, pp. 194–196, May 1991.
9. K. W. Kobayashi et al., “GaAs HBT wideband and low power consumption amplifiers to 20 GHz,” in IEEE MTT-S Int. Microwave Symp. Dig., June 1991, pp. 259–262.