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Volumn 32, Issue 3, 1995, Pages 49-55
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A Few Germanium Atoms in Just the Right Places Lift Silicon ICs to III-V Performance Heights without Sending Prices Through the Roof: Re-engineering silicon: Si-Ge Heterojunction Bipolar Technology
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
CHEMICAL VAPOR DEPOSITION;
CMOS INTEGRATED CIRCUITS;
DIGITAL TO ANALOG CONVERSION;
EPITAXIAL GROWTH;
HIGH TEMPERATURE OPERATIONS;
LATTICE CONSTANTS;
SEMICONDUCTING FILMS;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
THERMODYNAMIC STABILITY;
EMITTER COUPLED LOGIC;
RE-ENGINEERING;
SILICON GERMANIUM HETEROJUNCTION BIPOLAR TECHNOLOGY;
ULTRAHIGH VACUUM;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0029271142
PISSN: 00189235
EISSN: None
Source Type: Journal
DOI: 10.1109/6.367973 Document Type: Article |
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Times cited : (33)
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References (0)
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