The Importance of Neutral Base Recombination in Compromising the Gain of Si/SiGe Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 38, Issue 8, 1991, Pages 1973-1976

  Gibbings, C J ^b   Tuppen, C G ^b   Godfrey, D J ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b MARTLESHAM HEATH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON COMPOUNDS - DOPING;

NEUTRAL BASE RECOMBINATION; SILICON HOMOJUNCTION DEVICES;

TRANSISTORS, BIPOLAR;

EID: 0026202819     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.119045     Document Type: Article

References (15)

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