Analysis of BJT’s, Pseudo-HBT’s, and HBT’s by Including the Effect of Neutral Base Recombination

IEEE Transactions on Electron Devices

Volumn 41, Issue 10, 1994, Pages 1708-1715

  Mohammadi, Saeed ^a   Selvakumar, C R ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ENERGY GAP; HETEROJUNCTIONS; MATHEMATICAL MODELS;

EMITTER DELAY TIME; HETEROJUNCTION BIPOLAR TRANSISTOR; LIFE TIME MODEL; NEUTRAL BASE RECOMBINATION;

BIPOLAR TRANSISTORS;

EID: 0028517631     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.324578     Document Type: Article

References (24)

1. H. Kroemer, “Heterostructure bipolar transistors and integrated circuits,” Proc. IEEE, vol. 70, pp. 13–25. Jan. 1982.
2. S. M. Sze, High-Speed Semiconductor Devices. New York: Wiley, 1990.
3. E. J. Prinz and J. C. Sturm, “Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps,” IEEE Electron Device Lett., vol. 12, pp. 661–663, Dec. 1991.
4. E. J. Prinz and J.C. Sturm, “Current gain-Early voltage products in graded-base Si/Si1-xGex/Si heterojunction bipolar transistors,” IEEE Trans. Electron Devices. vol. 38, pp. 2695–2696, Dec. 1991.
5. K. Yano, K. Nakazato, M. Miyamoto, M. Aoki, and K. Shimohigashi, “A high current-gain low-temperature pseudo-HBT utilizing a sidewall base-contact structure,” IEEE Trans. Electron Devices, vol. 38, pp. 452–454, Dec. 1991.
6. Z. A. Shafi, C. J. Gibbings, P. Ashburn, I. R. C. Post, C. G. Tuppen, and D. J. Godfrey, “The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 38, pp. 1973–1976, Aug. 1991.
7. G. L. Patton, D. L. Harame, J. M. C. Stork, B. S. Meyerson, G. J. Scilla, and E. Ganin. “Graded-SiGe-base, poly-emitter heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 10, pp. 534–536, Dec. 1989.
8. E. J. Prinz and J. C. Sturm, “Base transport in near-ideal graded-base Si/Si]-xGex/Si heterojunction bipolar transistors from 150 K to 370 K,” in IEDM Tech. Dig., pp. 975–978, 1990.
9. C. A. King, J. L. Hoyt, and J. F. Gibbons, “Bandgap and transport properties of Si1-xGex by analysis of nearly ideal Si/Si1-xGex/Si heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 36, pp. 2093–2104, Oct. 1989.
10. J. M. McGregor, D. J. Roulston, J. P. Noel, and D. C. Houghton, “Output conductance of bipolar transistors with large neutral base recombination current,” IEEE Trans. Electron Devices, vol. 39, pp. 2569–2575, Nov. 1992.
11. W. U. Liu, D. Costa, and J. S. Harris Jr., “Theoretical comparison of base bulk recombination current and surface recombination current of a mesa AlGaAs/GaAs heterojunction bipolar transistor,” Solid-States Electron., vol. 34, no. 10, pp. 1119–1123, Oct. 1991.
12. A. Ouacha, Q. Chen, M. Willander, R. A. Logan, and T. Tanbun-Ek, “Recombination process and its effect on the DC performance of InP/InGaAs single-heterojunction bipolar transistors,” J. Appl. Phys., vol. 73, pp. 4444–4447, May 1993.
13. H. Kroemer, “Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region,” Solid-State Electron., vol. 28, no. 11, pp. 1101–1103, Nov. 1985.
14. K. Suzuki and N. Nakayama, “Base transit time of shallow base bipolar transistors considering velocity saturation at base-collector junction,” IEEE Trans. Electron Devices, vol. 39, pp. 623–628, Mar. 1992.
15. C. R. Selvakumar, “Simple general analytical solution to the minority carrier transport in heavily doped semiconductors.” J. Appl. Phys., vol. 56, pp. 3476–3478, Dec. 1984.
16. C. M. Van Vliet, “Bandgap narrowing and emitter efficiency in heavily doped emitter structures revisited,” IEEE Trans. Electron Devices, vol. 40, pp. 1140–1147, June 1993.
17. C. R. Selvakumar and D. J. Roulston, “A new simple analytical emitter model for bipolar transistors,” Solid-State Electron, vol. 30, no. 7, pp. 723–728, July 1987.
18. C. R. Selvakumar, “A new minority carrier lifetime model for heavily doped GaAs and InGaAsP to obtain analytical solutions,” Solid-State Electron., vol. 30, no. 7, pp. 773–774, July 1987.
19. J. W. Slotboom and H. C. deGraaff, “Measurements of bandgap narrowing in Si bipolar transistors,” Solid-State Electron., vol. 19, no. 10, pp. 857–862, Oct. 1976.
20. E. S. Yang, Microelectronic Devices. New York: McGraw-Hill. 1988.
21. S. M. Sze, Physics of Semiconductor Devices. 2nd ed. New York: Wiley, 1981.
22. TMA MEDICI, version 1, vol. 1, Mar. 1992.
23. D. J. Roulston and J. M. McGregor, “Effect of bandgap gradient in the base region of SiGe heterojunction bipolar transistors,” Solid-State Electron., vol. 35, no. 7, pp. 1019–1020, July 1992.
24. B. Pejcinovic, L. E. Kay, T. Tang, and D. H. Navon, “Numerical simulation and comparison of Si BJT's and Si1-xGex HBT’s,” IEEE Trans. Electron Devices, vol. 36, pp. 2129–2137, Oct. 1989.