Determination of the Minority-Carrier Base Lifetime of Junction Transistors by Measurements of Basewidth-Modulation Conductances

IEEE Transactions on Electron Devices

Volumn 26, Issue 9, 1979, Pages 1361-1363

  Neugroschel, A ^b   Lindholm, Fredrik A ^b  

^a MOTOROLA INC   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR;

EID: 0018515889     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19607     Document Type: Article

References (11)

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8. A. Neugroschel, F. A. Lindholm, and C. T. Sah, “A method for determining the emitter and base lifetimes in p-n junction diodes,” IEEE Trans. Electron Devices, vol. ED-24, pp. 662–671, June 1977.
9. P. J. Chen, “Determination of electronic parameters of the diffused layer and substrate of p-n junction diodes and solar cells,” Ph.D. dissertation, Univ. of Florida, 1978.
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11. R. E. Thomas and A. R. Boothroyd, “Determination of a physical model for double diffused transistors,” Solid-State Electron., vol. 11, pp. 365–375, Mar. 1968.