Self consistent bipolar transistor models for computer simulation

Solid State Electronics

Volumn 21, Issue 10, 1978, Pages 1269-1272

  Jaeger, R C ^a   Brodersen, A J ^b  

^a IBM   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR;

EID: 0018020447     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(78)90377-5     Document Type: Article

References (17)

1. Large-signal behavior of junction transistors
2. Characterization and modeling for statistical design
3. Modeling for circuit and system design
4. Modeling the Bipolar Transistor
5. The Effects of Space-Charge Layer Widening in Junction Transistors
6. An integral charge control model for the bipolar transistor
7. Incorporation of the Early effect in the Ebers-Moll model
8. Modeling the ‘Early Effect’ in bipolar transistors using an empirical but effective parameter
9. Remarks on [8]
10. Physical dependence and modeling of output admittance and gain-voltage relationships in bipolar transistors
11. A Sufficient Condition for an Early Voltage
12. The early voltage of a bipolar transistor
13. Modeling the early effect—A second look
14. Early intercept voltage: A parameter of voltage driven B.J.T.s.