Limits on gate insulator thickness for MISFET operation in pure-oxide and nitrided-oxide gate cases

Conference on Solid State Devices and Materials

Volumn , Issue , 1991, Pages 23-25

  Morimoto, T ^a   Momose, H S ^a   Tsuchiaki, M ^a   Ozawa, Y ^a   Yamabe, K ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES; SEMICONDUCTING FILMS--ELECTRIC PROPERTIES;

GATE FILMS; GATE INSULATORS; NITRIDED OXIDE GATES; TRANSCONDUCTANCE;

SEMICONDUCTOR DEVICES, MISFET;

EID: 0025759752     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.7567/ssdm.1991.a-2-1     Document Type: Conference Paper

References (6)