Gate oxide thickness dependence of hot carrier induced degradation on PMOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 1989, Pages 732-735

  Hiruta, Y ^a   Oyamatsu, H ^a   Momose, H S ^a   Iwai, H ^a   Maeguchi, K ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HOT CARRIERS; MOSFET DEVICES; THRESHOLD VOLTAGE;

DEVICE CHARACTERISTICS; GATE OXIDE THICKNESS; HOT CARRIER DEGRADATION; HOT-CARRIER-INDUCED DEGRADATION; STATE GENERATIONS; THIN GATE OXIDES; THRESHOLD VOLTAGE SHIFTS; TUNNELING EFFECTS;

INTERFACE STATES;

EID: 84907829623     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-642-52314-4_154     Document Type: Conference Paper

References (0)