High performance 0.1μm nMOSFET's with 10 ps/stage delay (85 K) at 1.5 V power supply

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1993, Pages 91-92

  Mii, Y ^a   Rishton, S ^a   Taur, Y ^a   Kern, D ^a   Lii, T ^a   Lee, K ^a   Jenkins, K ^a   Quinlan, D ^a   Brown, T ^a   Danner, D ^a   Sewell, F ^a   Polcari, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

VLSI CIRCUITS;

CHANNEL DEVICE; CURRENT GAINS; POWER SUPPLY; RING OSCILLATOR; SILICON DEVICES; SOURCE-DRAIN EXTENSIONS; SUBTHRESHOLD CHARACTERISTICS; SWITCHING SPEED;

MOSFET DEVICES;

EID: 85033822923     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1993.760260     Document Type: Conference Paper

References (4)

1. G. Sai-Halasz, et al., IEDM lech. Dig., p. 397 (1987).
2. R.H. Yan, et al., VLSI Tech. Dig., p. 86 (1992).
3. Y. Taur, et al., IEEE Elec. Dev. Lett., p. 267 (1992).
4. Y. Taur, et al., IEDM Tech. Dig., p. 901 (1992).