Influence of high substrate doping concentration on the hot- carrier and other characteristics of small-geometry CMOS transistors down to the 0.1 μm generation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 147-148

  Ono, M ^a   Saito, M ^a   Yoshitomi, T ^a   Fiegna, C ^a   Ohguro, T ^a   Momose, H S ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRONS; GEOMETRY; HOT CARRIERS; IMPURITIES; SEMICONDUCTOR DOPING; STRESSES; SUBSTRATES;

HOLES; IMPURITY CONCENTRATION; NSUB REGION; SUBSTRATE DOPING EFFECT;

MOSFET DEVICES;

EID: 0028594653     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)