Silicided silicon-sidewall source and drain (S4D) structure for high-performance 75-nm gate length pMOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1995, Pages 11-12

  Yoshitomi, T ^a   Saito, M ^a   Ohguro, T ^a   Ono, M ^a   Momose, H S ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CONCENTRATION (PROCESS); DIFFUSION IN SOLIDS; EXTRACTION; IMPURITIES; ION IMPLANTATION; NITRIDES; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

ALUMINUM WIRING; DRAIN IMPLANTATION; IN SITU DOPING; LIGHTLY DOPED DRAIN; SATURATION DRAIN CURRENT; SHORT CHANNEL EFFECTS; SILICIDED SILICON SIDEWALL SOURCE AND DRAIN STRUCTURE; SOLID PHASE DIFFUSION; SOURCE IMPLANTATION; THIN NITRIDE;

MOSFET DEVICES;

EID: 0029482695     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)