IIB-6 Indium Channel Implants for Improved MOSFET behavior at the 100-nm Channel Length Regime

IEEE Transactions on Electron Devices

Volumn 36, Issue 11, 1989, Pages 2605-

  Shahidi, G G ^a   Antoniadis, D A ^a   Smith, Henry I ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84948593666     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43706     Document Type: Article

References (2)

1. G.G. Shahidi, D.A. Antoniadis, and H.I. Smith, IEEE Electron Device Lett., vol. EDL-9, p. 94, 1988; and J. Vac. Sci. Technol. B, vol. 6, p. 137, 1988.
2. G.G. Shahidi, D.A. Antoniadis, and H.I. Smith, “Reduction of channel-hot-electron-generated substrate current in sub-150 nm channel length Si MOSFETs,” IEEE Electron Device Lett., vol. 9, p. 497, 1988.