Nitridization of the stacked poly-si gate to suppress the boron penetration in pMOS

IEEE Transactions on Electron Devices

Volumn 43, Issue 7, 1996, Pages 1161-1165

  Lin Hao, Yung ^a   Lai, Chao Sung ^a   Lee Lcn, Chung ^a   Lei, Tan Fu ^a   Chao, Tien Sheng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DIFFUSION; FLUORINE; GRAIN BOUNDARIES; NITROGEN; OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON;

GATE OXIDE; LOW PRESSURE NITRIDATION; NITROGEN RICH LAYERS; POLYSILICON GATE;

MOS DEVICES;

EID: 0030193604     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502428     Document Type: Article

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