Suppression of Boron Penetration into an Ultra-Thin Gate Oxide (≤7nm) by Using a Stacked-Amorphous-Silicon(SAS) Film

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 329-332

  Wu, Shye Lin ^a   Lee, Chung Len ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BORON; CHARGE TRAPPING; SILICA; SILICON OXIDES; CAPACITORS; INTERFACES (MATERIALS); MOSFET DEVICES; SILICON;

AMORPHOUS SILICON FILM; BORON PENETRATION; CHARGE-TRAPPING; FLAT-BAND VOLTAGE SHIFT; GATE CAPACITORS; GATE STRUCTURE; PMOSFET; POLY-SI GATES; ULTRA-THIN GATE OXIDES; ULTRA-THIN OXIDE;

INTERFACE STATES; GATES (TRANSISTOR);

BORON PENETRATION; STACKED AMORPHOUS SILICON (SAS); ULTRA THIN GATE OXIDE;

EID: 0027879329     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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