Suppression of the Boron Penetration Induced Si/SiO2 Interface Degradation by Using a Stacked-Amorphous-Silicon Film as the Gate Structure for pMOSFET

IEEE Electron Device Letters

Volumn 15, Issue 5, 1994, Pages 160-162

  Wu, Shye Lin ^a   Lee, Chung Len ^a   Lei, Tan Fu ^a   Chen, J F ^b   Chen, L J ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRONIC PROPERTIES; SEMICONDUCTING SILICON; SUBSTRATES;

BORON PENETRATION SUPPRESSION; GATE STRUCTURE; INTERFACE DEGRADATION; STACKED AMORPHOUS SILICON FILM;

MOSFET DEVICES;

EID: 0028422922     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.291600     Document Type: Article

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