Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

IEEE Electron Device Letters

Volumn 16, Issue 6, 1995, Pages 248-249

  Lin, Yung Hao ^a   Lai, Chao Sung ^a   Lee, Chung Len ^a   Lei, Tan Fu ^a   Chao, Tien Sheng ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON FLUORIDE; BORON PENETRATION; ELECTRICAL CHARACTERISTICS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; NITRIDATION; NITROGEN RICH LAYERS; STACKED POLY SILICON GATE;

CAPACITORS; CHEMICAL VAPOR DEPOSITION; FLUORINE; ION IMPLANTATION; MOS DEVICES; NITROGEN; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY;

GATES (TRANSISTOR);

EID: 0029324282     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.790724     Document Type: Article

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