Suppression of boron penetration in pmos by using oxide gettering effect in poly-si gate

Japanese Journal of Applied Physics

Volumn 34, Issue 2S, 1995, Pages 752-756

  Lin, Yung Hao ^a   Lee, Chung Len ^a   Lei, Tan Fu ^a   Chao, Tien Sheng ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

BF(FORMULA PRESENTED) implantation; Boron penetration; Oxide gettering fluorine effect; PMOS; Stacked poly Si gate

Indexed keywords

BORON; ELECTRIC PROPERTIES; FLUORINE; GATES (TRANSISTOR); ION IMPLANTATION; OXIDES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

BORON PENETRATION; OXIDE GETTERING FLUORINE EFFECT; POLYCRYSTALLINE SILICON GATE; POST IMPLANT ANNEALING PROCESS;

MOSFET DEVICES;

EID: 0029252427     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.752     Document Type: Article

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