Fluorine Diffusion on a Polysilicon Grain Boundary Network in Relation to Boron Penetration from P+ Gates

IEEE Electron Device Letters

Volumn 13, Issue 1, 1992, Pages 14-16

  Tseng, Hsing Huang ^a   Orlowski, Marius ^a   Tobin, Philip J ^a   Hance, Robert L ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPUTER SIMULATION; FLUORINE - DIFFUSION; HEAT TREATMENT - ANNEALING;

BORON PENETRATION; GRAIN BOUNDARY DIFFUSION; POLYSILICON GRAIN BOUNDARIES; SIMS CONCENTRATION DEPTH PROFILES;

SEMICONDUCTING SILICON;

EID: 0026712574     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.144936     Document Type: Article

References (9)

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2. Y. Nishioka et al., “Hot electron hardened Si-gate MOSFET utilizing F implantation,” IEEE Electron Device Lett., vol. 10, p. 141, Apr. 1989.
3. F.K. Baker et al., “The influence of fluorine on threshold voltage instabilities in P+ polysilicon gated P-channel MOSFET's,” in IEDM Tech. Dig., 1989, p. 443.
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5. H.-H. Tseng et al., “The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in BF2 implanted P+ gate P-channel MOSFETs,” in Dig. Int. Symp. VLSI Technol., 1990, p. 111.
6. H.-H. Tseng, R.L. Hance, P.J. Tobin, and V.S. Kaushik, “The effects of boron and fluorine diffusion from P+ polysilicon gates on flat-band voltage instabilities,” Electrochem. Soc. Extended Abst., vol. 91–1, p. 613, 1991.
7. J.N. Roberts and L.M. Schwarts, “Grain consolidation and electrical conductivity in porous media,” Phys. Rev. B, vol. 31, p. 5990 1985.
8. C.Y. Wong and F.S. Lai, “Ambient and dopant effects on boron diffusion in oxides,” Appl. Phys. Lett., vol. 48, p. 1658, 1986.
9. M. Orlowski, H.-H. Tseng, P.J. Tobin, and R.L. Hance, “Fractal network diffusion of fluorine and boron in polysilicon gates,” in preparation.