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Volumn 140, Issue 12, 1993, Pages 3624-3627
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Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal-Oxide-Semiconductor Devices
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Author keywords
[No Author keywords available]
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Indexed keywords
BORON;
DIFFUSION;
MATHEMATICAL MODELS;
SILICON COMPOUNDS;
SPECTROSCOPY;
CRITICAL TIME MODEL;
OXYNITRIDE;
SECONDARY ION MASS SPECTROSCOPY;
SILICON OXIDE;
MOS DEVICES;
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EID: 0027753412
PISSN: 00134651
EISSN: 19457111
Source Type: Journal
DOI: 10.1149/1.2221138 Document Type: Article |
Times cited : (63)
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References (15)
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