Fluorine effect on boron diffusion of p+ gate devices

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 447-450

  Sung, J M ^a   Lu, C Y ^a   Chen, M L ^a   Hillenius, S J ^a   Lindenberger, W S ^a   Manchanda, L ^a   Smith, T E ^a   Wang, S J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; FLUORINE; SEMICONDUCTING SILICON;

BORON PENETRATION; BORON-IMPLANTED GATE; FLUORINE CONCENTRATION; NEGATIVE CHARGE GENERATION; POLYSILICON GATES; THRESHOLD VOLTAGES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024896106     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)