Chapter 2 High-Efficiency AlGalnP Light-Emitting Diodes

Semiconductors and Semimetals

Volumn 64, Issue C, 1999, Pages 49-128

  Chui, H ^a   Gardner, N F ^a   Grillot, P N ^a   Huang, J W ^a   Krames, M R ^a   Maranowski, S A ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 0006009759     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62488-6     Document Type: Article

References (147)

1. Adachi S. J. Appl. Phys. 53 (1982) 8775-8792
2. Adachi S. J. Appl. Phys. 58 (1985) R1-R29
3. Alferov Zh.I., Andreev V.M., and Garbuzov Rumyantsev D.Z. Sov. Phys. Semicond. 9 (1975) 305-309 Engl. Transl.
4. Asahi H., Kawamura Y., and Nagai H. J. Appl. Phys. 53 (1982) 4928-4931
5. Bartram M.E. Presented in ICMOVPE IX (1998), La Jolla, CA
6. Bhat R., Koza M.A., Brasil M.J.S.P., Nahory R.E., Palmstrom C.J., and Wilkens B.J. J. Cryst. Growth 124 (1992) 576-582
7. Boroditsky M., and Yablonovitch E. Proc. SPIE 3002 (1997) 119-122
8. Bour, D. P. 1987 Ph.D. Thesis, Cornell University, Ithaca, NY.
9. Bour D.P. In: Zory Jr. P.S. (Ed). Quantum Well Lasers (1993), Academic Press, Boston 415-460
10. Bour D.P., and Shealy J.R. IEEE J. Quantum Electron. QE-24 (1988) 1856-1863
11. Breiland W.G., and Evans G.H. J. Electrochem. Soc. 138 (1991) 1806-1816
12. Breiland W.G., Hou H.Q., Chui H.C., and Hammons B.E. J. Cryst. Growth 174 (1997) 564-571
13. Cao D.S., Kimball A.W., and Stringfellow G.B. J. Appl. Phys. 67 (1990) 739-744
14. Cao D.S., Reihlen E.H., Chen G.S., Kimbal A.W., and Stringfellow G.B. J. Cryst. Growth 109 (1991) 279-284
15. Carr W.N. Infrared Phys. 6 (1966) 1-19
16. Cederberg J.G., Bieg B., Huang J.W., Stockman S.A., Peanasky M.J., and Kuech T.F. Mat. Res. Soc. Symp. Proc. 484 (1998) 611-615
17. Chad N., Jordan A.S., Chu S.N.G., and Geva M. Appl. Phys. Lett. 59 (1991) 3270-3272
18. Chang Chang C.S.S.J., Su Y.K., Chang P.T., Wu Y.R., Huang K.H., and Chen T.P. IEDMS B6-4 (1996) 199-202
19. Chang S.J., Chang C.S., Su Y.K., Chang P.T., Wu Y.R., Huang K.H., and Chen T.P. IEEE Photon. Technol. Lett. 9 (1997) 1199-1201
20. Chang S.J., Chang C.S., Su Y.K., Chang P.T., Wu Y.R., Huang K.H., and Chen T.P. IEEE Photon. Technol. Lett. 9 (1997) 182-184
21. Chen C.H., Larsen C.A., and Stringfellow G.B. Appl. Phys. Lett. 50 (1987) 218-220
22. Chen C.H., Cao D.S., and Stringfellow G.B. J. Electron. Mater. 17 (1988) 67-73
23. Chen C.H., Stockman S.A., Peanasky M.J., and Kuo C.P. In: Stringfellow G.B., and Craford M.G. (Eds). Semiconductors and Semimetals 48 (1997), Academic Press, New York 97-148
24. Chen J.C., Huang Z.C., Lee K.J., and Kanjolia R. J. Electron. Mater. 26 (1997) 361-365
25. Chua C.L., Thornton R.L., Treat D.W., Yang V.K., and Dunnrowicz C.C. IEEE Photon. Technol. Lett. 9 (1997) 551-553
26. Cook L.W., Camras M.D., Rudaz S.L., and Steranka F.M. In: Christou A., and Rupprecht H.S. (Eds). Proceedings of the 14th Int. Symp. on GaAs and Related Compounds 91 (1988), Institute of Physics, Bristol 777-780
27. Craford M.G. In: Stringfellow G.B., and Craford M.G. (Eds). Semiconductors and Semimetals 48 (1997), Academic Press, New York 47-63
28. Craford M.G., Stillman G.E., Holonyak Jr. N., and Rossi J.A. J. Electron. Mater. 20 (1991) 3-12
29. Dallesasse J.M., Holonyak Jr. N., Sugg A.R., Richard T.A., and El-Zein N. Appl. Phys. Lett. 57 (1990) 2844-2846
30. De Neve Blondelle H., Van J., Daele P., Demeester P., Baets R., and Borghs G. Proc. SPIE 3002 (1997) 74-84
31. Dierschke E.G., Stone L.E., and Haisty R.W. Appl. Phys. Lett. 19 (1971) 98-100
32. Endo K., Kobayashi K., Fujii H., and Ueno Y. Appl. Phys. Lett. 64 (1994) 146-148
33. EpiChem. A Quarterly Update to the Electronics Industry. First quarter issue. (1998)
34. Fletcher R.M., Kuo C.P., Osentowski T.D., Huang K.H., Craford M.G., and Robbins V.M. J. Electron. Mater. 20 (1991) 1125-1130
35. Gardner N.F., Maranowski S.A., Kocot C.P., Chui H.C., Huang J.-W., Hueschen M., and Grillot P.N. Temperature-dependent performance of AlGaInP-based light emitting diodes. (1999), San Jose, CA Presented at 1999 Photonics West
36. Gomyo A., Kobayashi K., Kawata S., Hino I., and Suzuki T. J. Cryst. Growth 77 (1986) 367-373
37. Grillot P.N., Ringel S.A., and Fitzgerald E.A. J. Electronic Mater. 25 (1996) 1028-1036
38. Grillot, P. N., Stockman, S. A., and Pesic, K. 1998 Unpublished data.
39. Grillot, P. N., Stockman, S. A., Chen, E., and Peanasky, M. 1999 Unpublished data.
40. Groves W.O., Herzog A.H., and Craford M.G. Appl. Phys. Lett. 19 (1971) 184-186
41. Gurary A.I., Thompson A.G., Stall R.A., Kroll W.J., and Schumaker N.E. J. Electronic Mater. 24 (1995) 1637-1640
42. Hagen S.H., Valster A., van der Boermans M.J.B., and Heyden J. Appl. Phys. Lett. 57 (1990) 2291-2293
43. Hamada H., Honda S., Shono M., Hiroyama R., Yodoshi K., and Yamaguchi T. Electron. Lett. 28 (1992) 585-587
44. Hao P.H., Wang L.C., Ressel P., and Kuo J.M. J. Vac. Sci. Technol. B-14 (1996) 3244-3247
45. Hergeth J., Grutzmacher D., Reinhardt F., and Balk P. J. Cryst. Growth 107 (1991) 537-542
46. Herrick R.W., and Petroff P.M. Appl. Phys. Lett. 72 (1998) 1799-1801
47. Hewlett-Packard Company. LED Thermal Testing. Optoelectronics Division Application Brief A05. (1996), Hewlett-Packard Company, Palo Alto, CA
48. Hewlett-Packard Company. LED Lamp Thermal Properties. Optoelectronics Division Application Brief A04. (1996), Hewlett-Packard Company, Palo Alto, CA
49. Hobson W.S. Electrochem. Soc. Proc. 95-21 (1995) 26-42
50. Hodapp M.W. In: Stringfellow G.B., and Craford M.G. (Eds). Semiconductors and Semimetals 48 (1997), Academic Press, New York 227-356
51. Hofler G.E., Vanderwater D.A., DeFevere D.C., Kish F.A., Camras M.D., Steranka F.M., and Tan I.-H. App. Phys. Lett. 69 (1996) 803-805
52. Hofler G.E., Carter-Coman C., Krames M.R., Gardner N.F., Kish F.A., Tan T.S., Loh B., Posselt J., Collins D., and Sasser G. Electron. Lett. 34 (1998) 1781-1782
53. Holonyak Jr. N., and Bevaqua S.F. Appl. Phys. Lett. 1 (1962) 82-83
54. Hou H.Q., Chui H.C., Choquette K.D., Hammons B.E., Breiland W.G., and Geib K.M. IEEE Photon. Technol. Lett. 8 (1996) 1285-1287
55. Huang K.H., Yu J.G., Kuo C.P., Fletcher R.M., Osentowski T.D., Stinson L.J., Craford M.G., and Liao A.S.H. Appl. Phys. Lett. 61 (1992) 1045-1047
56. Huang J.W., Gaines D.F., Kuech T.F., Potemski R.M., and Cardone F. J. Electron. Mater. 23 (1994) 659-667
57. Huang, J. W., Stockman, S. A., Peanasky, M. J., and Chui, H. 1997 Unpublished.
58. Huang, J. W., Stockman, S. A., and Ochiai, M. 1998 Unpublished.
59. Iga K., Uenohara H., and Koyama F. Electron. Lett. 22 (1986) 1008-1010
60. Ishikawa M., Ohba Y., Sugawara H., Yamamoto M., and Nakanishi T. Appl. Phys. Lett. 48 (1986) 207-208
61. Itaya K., Ishikawa M., Watanabe Y., Nitta K., Hatakoshi G., and Uematsu Y. Jpn. J. Appl. Phys. 27 (1989) L2414-L2416
62. Kato T., Susawa H., Hirotani M., Saka T., Ohashi Y., Shichi E., and Shibata S. J. Cryst. Growth 107 (1991) 832-835
63. Kim M.G., Kwon S.D., Kim C.H., Lee J.B., Choe B.-D., and Lim H. Appl. Phys. Lett. 63 (1993) 1366-1368
64. Kish F.A., and Fletcher R.M. In: Stringfellow G.B., and Craford M.G. (Eds). Semiconductors and Semimetals 48 (1997), Academic Press, New York 149-226
65. Kish F.A., Steranka F.M., DeFevere D.C., Vanderwater D.A., Park K.G., Kuo C.P., Osentowski T.D., Peanasky M.J., Yu J.G., Fletcher R.M., Steigerwald D.A., Craford M.G., and Robbins V.M. Appl. Phys. Lett. 64 (1994) 2839-2841
66. Kish F.A., Vanderwater D.A., DeFevere D.C., Steigerwald D.A., Hofler G.E., Park K.G., and Steranka F.M. IEEE Electron. Lett. 32 (1996) 132-133
67. Kobayashi K., Kawara S., Gomyo A., Hino I., and Suzuki T. Electron. Lett. 21 (1985) 931-932
68. Kocot, C., Grillot, P. N., Gardner, N. F., Maranowski, S. A., and Stockman, S. A. 1998 Unpublished data.
69. Kondo M., Anayama C., Sekiguchi H., and Tanahashi T. J. Cryst. Growth 141 (1994) 1-10
70. Kondo M., Okada N., Domen K., Sugiura K., Anayama C., and Tanahashi T. J. Electron. Mater. 23 (1994) 355-358
71. Krames, M. R., Gardner, N. F., Chui, H., Stockman, S. A., and Grillot, P. N. 1998 Unpublished data.
72. Kressel H., and Butler J.K. Semiconductor Lasers and Heterojunction LEDs (1977), Academic Press, New York
73. Kroemer H. Proc IEEE 51 (1963) 1782-1783
74. Kuech T.F. Mater. Sci. Reports 2 (1987) 1-49
75. Kuech T.F., Veuhoff E., and Meyerson B.S. J. Cryst. Growth 68 (1984) 48-53
76. Kuech T.F., Wolford D.J., Veuhoff E., Deline V., Mooney P.M., Potenski R., and Bradley J. J. Appl. Phys. 62 (1987) 632-643
77. Kuech T.F., Wang P.J., Tischler M.A., Potemski R., Scilla G.J., and Cardone F. J. Cryst. Growth 93 (1988) 624-630
78. Kuech T.F., Potemski R., Cardone F., and Scilla G. J. Electron. Mater. 21 (1992) 341-346
79. Kuo C.P., Fletcher R.M., Osentowski T.D., Lardizabal M.C., and Craford M.G. Appl. Phys. Lett. 57 (1990) 2937-2939
80. Larsen C.A., Buchan N.I., and Stringfellow G.B. J. Cryst. Growth 85 (1987) 148-153
81. Lee W.I. Appl. Phys. Lett. 67 (1995) 3753-3755
82. Lei T.F., and Jeng G.K. Solid-State Electron. 31 (1987) 109-113
83. Lester S.D., Ponce F.A., Craford M.G., and Steigerwald D.A. Appl. Phys. Lett. 66 (1995) 1249-1251
84. In: Lide D.R. (Ed). CRC Handbook of Chemistry and Physics. 71th ed. (1990), CRC Press Inc., Boca Raton, FL
85. Lin J.-F., Wu M.C., Jou M.J., Chang C.M., Chen C.Y., and Lee B.J. J. Appl. Phys. 74 (1993) 1781-1786
86. Lin J.-F., Wu M.-C., Jou M.-J., Chang C.-M., Lee B.-J., and Tsai Y.-T. Electron. Lett. 30 (1994) 1793-1794
87. Lin J.-F., Wu M.C., Jou M.J., Chang C.M., and Lee B.J. J. Cryst. Growth 142 (1994) 15-20
88. Logan R.A., White H.G., and Wiegmann W. Appl. Phys. Lett. 13 (1968) 139-141
89. Macksey H.M., Lee M.H., Holonyak Jr. N., Hitchens W.R., Dupius R.D., and Campbell J.C. J. Appl. Phys. 44 (1973) 5035-5040
90. Maeda T., Hata M., Isemura M., and Yako T. Appl. Organometal. Chem. 5 (1991) 319-323
91. Manasevit H.M., and Simpson W.I. J. Electrochem. Sac. 116 (1969) 1725-1732
92. Maranowski, S. A., Stockman, S. A., Peanasky, M., Chui, H., Huang, J. W., and Grillot, P. N. 1997 Unpublished data.
93. McCalmont J.S., Casey Jr. H.C., Wang T.Y., and Stringfellow G.B. J. Appl. Phys. 71 (1992) 1046-1048
94. McKee M.A., McGivney T., Walker D., Capuder K., Norris P.E., and Rose B.C. J. Electron. Mater. 21 (1992) 289-292
95. Minagawa S., Kondow M., Yanagisawa H., and Tanaka T. J. Cryst. Growth 118 (1992) 425-429
96. Morrison A.P., Lambkin J.D., van der Poel C.J., and Valster A. IEEE Photon. Technol. Lett. 8 (1996) 849-851
97. Motoda T., Kato M., Kadoiwa K., Shima A., Tsugami M., Sonoda T., Takamiya S., and Mitsui S. J. Cryst. Growth 145 (1994) 650-654
98. Naritsuka S., Nishikawa Y., Sugawara H., Ishikawa M., and Kokubun Y. J. Electron. Mater. 20 (1991) 687-690
99. Nishizawa J., Suto K., and Teshima T. J. Appl. Phys. 48 (1977) 3484-3495
100. Nishizawa J., Koike M., and Jin C.C. J Appl. Phys. 54 (1983) 2807-2812
101. Nishikawa Y., Tsuburai Y., Nozaki C., Ohba Y., Kokubun Y., and Kinoshita H. Appl. Phys. Lett. 53 (1988) 2182-2184
102. Nishikawa Y., Suzuki M., Tshikawa M., Kokubun Y., and Hatakoshi G. J. Cryst. Growth 123 (1992) 181-187
103. Nishikawa Y., Sugawara H., and Kokubun Y. J. Cryst. Growth 119 (1992) 292-296
104. Nishikawa Y., Suzuki M., and Okajima M. Jpn. J. Appl. Phys. 32 (1993) 498-501
105. Nuese C.J., Sigai A.G., and Gannon J.J. Appl. Phys. Lett. 20 (1972) 431-434
106. Ohba Y., lshikawa M., Sugawara H., Yamamoto M., and Nakanisi T. J. Cryst. Growth 77 (1986) 374-379
107. Ohba Y., Nishikawa Y., Nozaki C., Sugawara H., and Nakanisi T. J. Cryst. Growth 93 (1988) 613-617
108. Ota T., Otake S., and Iwasa I. J. Cryst. Growth 133 (1993) 207-211
109. Peanasky, M. P. 1998 Unpublished.
110. People R. IEEE J. Quantum Electron. QE-22 (1986) 1696-1710
111. Roberts J.S., David J.P.R., Sale T.E., and Tihanyi P.L. J. Cryst. Growth 143 (1994) 135-140
112. Roberts J.S., Button C.C., and Chew A. J. Cryst. Growth 135 (1994) 365-366
113. Saka T., Hirotani M., Kato T., and Susawa H. J. Appl. Phys. 73 (1993) 380-383
114. Schnitzer I., Yablonovitch E., Caneau C., and Gmitter T.J. Appl. Phys. Lett. 62 (1993) 131-133
115. Schnitzer I., Yablonovitch E., Caneau C., Gmitter T.J., and Scherer A. Appl. Phys. Lett. 63 (1993) 2174-2176
116. Schubert E.F. Doping in III-V Semiconductors. (1993), Cambridge University Press, New York
117. Shealy J.R., Kreismanis V.G., Wagner D.K., and Woodall J.M. Appl. Phys. Lett. 42 (1983) 83-85
118. Stockman S.A., Huang J.W., Osentowski T.D., Chui H.C., Peanasky M.J., Maranowski S.A., Grillot P.N., Moll A.J., Chen C.H., Kuo C.P., and Liang B.W. J. Electron. Mater. 28 (1999) 916-925
119. Strauch G., Hergeth J., Wachtendorf B., Volk M., and Woelk E. In: Yoshikawa A., Kishino K., Kobayashi M., and Yasuda T. (Eds). Blue Laser and Light Emitting Diodes (1996), Ohmsha, Tokyo 375-378
120. Streetman B.G. Solid State Electronic Devices (1990), Prentice-Hall, Englewood Cliffs, NJ
121. Stringfellow G.B. Organometallic Vapor Phase Epitaxy: Theory and Practice (1989), Academic Press, Boston
122. Stringfellow G.B. Mater. Res. Soc. Bull. 22 7 (1997) 27-32
123. Su L.C., Ho I.H., and Stringfellow G.B. J. Cryst. Growth 146 (1995) 558-563
124. Sugawara H., lshikawa M., and Hatakoshi G. Appl. Phys. Lett. 58 (1991) 1010-1012
125. Sugawara H., Itaya K., Nozaki H., and Hatakoshi G. Appl. Phys. Lett. 61 (1992) 1775-1777
126. Sugawara, H., Ishikawa, M., Kokubun, Y., Nishikawa, Y., Naritsuka, S., Itaya, K., Hatakoshi, G., and Suzuki, M. 1992b U.S. Pat. 5,153,889.
127. Sugawara H., Itaya K., Ishikawa M., and Hatakoshi G. Jpn. J. Appl. Phys. 31 (1992) 2446-2451
128. Sugawara H., Itaya K., and Hatakoshi G. J. Appl. Phys. 74 (1993) 3189-3193
129. Sugawara H., Kazuhiko I., and Hatakoshi G. Jpn. J. Appl. Phys. 33 (1994) 5784-5787
130. Sugawara H., Itaya K., and Hatakoshi G. Jpn. J. Appl. Phys. 33 (1994) 6195-6198
131. Suzuki T. Mater. Res. Soc. Bull. 22 7 (1997) 33-37
132. Suzuki M., Ishikawa M., Itaya K., Nishikawa Y., Hatakoshi G., Kokubun Y., Nishizawa J., and Oyama Y. J. Cryst. Growth 115 (1991) 498-503
133. Suzuki M., Itaya K., Nishikawa Y., Sugawara H., and Okajima M. J. Cryst. Growth 133 (1993) 303-308
134. Suzuki M., Itaya K., and Okajima M. Jpn. J. Appl. Phys. 33 (1994) 749-753
135. Sze S.M. Physics of Semiconductor Devices. 2nd ed. (1981), Wiley, New York
136. Tan, T. S. 1997 Unpublished data.
137. Thompson A.G. Process. Adv. Mater. 4 (1994) 181-188
138. Thompson A.G., Armour E., Collins D., Zawadzki P., Karlicek R., and Stall R.A. Proc. SPIE 3002 (1997) 123-131
139. Thrush E.J., Cureton C.G., Trigg J.M., Stagg J.P., and Butler B.R. Chemtronics 2 (1987) 62-68
140. Tompa G.S., Zawadzki P.A., Moy K., McKee M., Thompson A.G., Gurary A.I., Wolak E., Esherick P., Breiland W.G., Evans G.H., Bulitka N., Hennessy J., and Moore C.J.L. J. Cryst. Growth 145 (1994) 655-661
141. Tu K., Mayer J.W., and Feldman L.C. Electronic Thin Film Science for Electrical Engineers and Materials Scientists (1992), Macmillan, New York
142. Vanderwater D.A., Tan I.-H., Hofler G.E., Defevere D.C., and Kish F.A. Proc. IEEE. 85 (1997) 1752-1764
143. Wang S. Fundamentals of Semiconductor Theory and Device Physics (1989), Prentice-Hall, Englewood Cliffs, NJ
144. Windisch R., Heremans P., Potemans J., Knobloch A., Dutta B., Doehler G.H., and Borghs G. IEDM Tech. Digest (1998) 1028-1030
145. Wu C.-C., Chang C.-Y., Chen P.-A., Chen H.-D., Lin K.-C., and Chan S.-H. Appl. Phys. Lett. 65 (1994) 1269-1271
146. Young D.B., Babic D.I., DenBaars S.P., and Coldren L.A. Electron. Lett. 28 (1992) 1873-1874
147. Zunger A. Mater. Res. Soc. Bull. 22 7 (1997) 20-26