Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium

Journal of Electronic Materials

Volumn 28, Issue 7, 1999, Pages 916-925

  Stockman, S A ^a   Huang, J W ^a   Osentowski, T D ^a   Chui, H C ^a   Peanasky, M J ^a   Maranowski, S A ^a   Grillot, P N ^a   Moll, A J ^a   Chen, C H ^a   Kuo, C P ^a   Liang, B W ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; AMINES; ATOMS; COMPOSITION; DOPING (ADDITIVES); GROWTH (MATERIALS); MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOSPHORUS COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS; TEMPERATURE;

DIETHYLALUMINUM ETHOXIDE; OXYGEN INCORPORATION; SUPERLINEAR FUNCTION; SURFACE INTERACTION;

OXYGEN;

EID: 0032691631     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0220-x     Document Type: Article

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