High-flux high-efficiency transparent-substrate AlGalnP/GaP light-emitting diodes

Electronics Letters

Volumn 34, Issue 18, 1998, Pages 1781-1782

  Hofler G E ^a   Carter Coman, C ^a   Krames, M R ^a   Gardner, N F ^a   Kish, F A ^a   Tan, T S ^b   Loh, B ^a   Posselt, J ^a   Collins, D ^a   Sasser, G ^a  

^a HEWLETT PACKARD COMPANY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENCE OF SOLIDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

LUMINOUS EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 0032480157     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981217     Document Type: Article

References (5)

1. Hewlett-Packard Company Super Flux LEDs Tech. Data Sheet 5965-5086E (1996)
2. 0.5P/GaP light-emitting diodes', Appl. Phys. Lett., 1994, 64, (21), pp. 2839-2841
3. KISH, FA., and FLETCHER, R.M.: 'AlGaInP light-emitting diodes' in STRINGFELLOW, C.B., and CRAFORD, M.G. (Eds.): 'High-brightness light-emitting diodes' (Academic, New York, 1997), Vol. 48, pp. 149-226
4. KISH, F.A., DEFEVERE, D.C., VANDERWATER, D.A., TROTT, G.R., WEISS, R.J., and MAJOR, J.S.: 'High luminous flux semiconductor wafer-bonded AlGaInP/GaP large-area emitters'. Electron. Lett.. 1994, 30, (21) pp. 1790-1791
5. WEAST, R.C. (Ed.): CRC handbook of chemistry and physics, 62 edition (CRC Press, Inc., Boca Raton, FL, 1981) p. E-99