Light-emitting diode extraction efficiency

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3002, Issue , 1997, Pages 119-122

  Boroditsky, Misha ^a   Yablonovitch, Eli ^a  

^a Engineering IV   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIODES; EXTRACTION; INDUSTRIAL RESEARCH; LIGHT EMISSION;

CLADDING LAYERS; DEVICE GEOMETRIES; EXTRACTION EFFICIENCIES; INTERNAL QUANTUM EFFICIENCY (IQE); LIGHT-EMITTING; PHOTOLUMINESCENCE (PL) MEASUREMENTS; PHOTON RECYCLING; SURFACE SCATTERING;

LIGHT EMITTING DIODES;

EID: 0043173459     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.271033     Document Type: Conference Paper

References (3)

1. I. Schnitzer, E. Yablonovitch, C. Caneau, T.J Gmitter, J.Appl. Phys. Lett. 62, 131 (1993).
2. "Very High-Efficiency Semiconductor Wafer-Bonded Transparent Substrate (AlGa)InP/GaP Light-Emitting Diodes", F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford, and V. M. Robbins, Appl. Phys. Lett. 64, 2839 (1994).
3. Pancove "Optical processes in semiconductors", Dover Publications, New York, 1975.