Effects of trimethylindium on the purity of In0.5Al0.5P and In0.5Al0.5As epilayers grown by metalorganic chemical vapor deposition

Journal of Electronic Materials

Volumn 26, Issue 4, 1997, Pages 361-365

  Chen, J C ^a   Huang, Z C ^a,c   Lee, K J ^a,d   Kanjolia, Ravi ^b  

^a University of Marylandw Baltimore County   (United States)

^b Morton International Inc   (United States)

^c HUGHES STX CORPORATION   (United States)

^d UNIVERSITY OF MARYLAND   (United States)

Author keywords

InAlAs; InAlP; Metalorganic chemical vapor deposition (MOCVD); Trimethylindium (TMIn)

Indexed keywords

CAPACITANCE MEASUREMENT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; REDUCTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE MEASUREMENT;

TRIMETHYLINDIUM (TMIN);

SEMICONDUCTOR SUPERLATTICES;

EID: 0031124773     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0102-z     Document Type: Article

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