AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

IEEE Photonics Technology Letters

Volumn 9, Issue 9, 1997, Pages 1199-1201

  Chang, S J ^b   Chang, C S ^b   Su, Y K ^a,b   Chang, P T ^c   Wu, Y R ^c   Huang, K H ^c   Chen, T P ^c  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c United Epitaxy Company Ltd   (Taiwan)

Author keywords

AlGaInP; LED; MQB; MQW; TSBC

Indexed keywords

CLADDING (COATING); ELECTROLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

TENSILE STRAIN BARRIER CLADDING (TSBC) STRUCTURE;

LIGHT EMITTING DIODES;

EID: 0031238272     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.618476     Document Type: Article

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