Effect of composition on deep levels in heteroepitaxial GexSi1-x layers and evidence for dominant intrinsic recombination-generation in relaxed Ge layers on Si

Journal of Electronic Materials

Volumn 25, Issue 7, 1996, Pages 1028-1036

  Grillot, P N ^a   Ringel, S A ^a   Fitzgerald, E A ^b  

^a Ohio State University   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Electron traps; Ge photodetectors; GeSi; Hole traps; Recombination generation centers

Indexed keywords

EPITAXIAL GROWTH; PHOTODETECTORS; SEMICONDUCTOR MATERIALS; SILICON;

ELECTRON TRAPS; GERMANIUM SILICIDES; HOLE TRAPS; INTRINSIC RECOMBINATION GENERATION;

GERMANIUM ALLOYS;

EID: 0030181010     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02659898     Document Type: Article

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