Oxygen-related defects in In0.5(AlxGa1-x)0.5P grown by MOVPE

Materials Research Society Symposium - Proceedings

Volumn 484, Issue , 1997, Pages 611-615

  Cederberg, J G ^a   Bieg, B ^a   Huang, J W ^a   Stockman, S A ^a   Peanasky, M J ^a   Kuech, T F ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EMISSION SPECTROSCOPY; LUMINESCENCE OF SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH;

DIETHYLALUMINUM ETHOXIDE; FREE CARRIER LIFETIME; OXYGEN RELATED DEFECTS; VISIBLE EMISSION SPECTRUM;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031370354     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-484-611     Document Type: Conference Paper

References (12)