|
Volumn 377, Issue 2-3, 1996, Pages 217-223
|
Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons, and pions
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
ELECTRIC CURRENTS;
IRRADIATION;
NEUTRONS;
PROTONS;
RADIATION DAMAGE;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
DISPLACEMENT DAMAGE FUNCTION;
DOPING CONCENTRATIONS;
ENERGY DEPENDENCE;
ISOTHERMAL ANNEALING;
PIONS;
REVERSE ANNEALING;
SILICON DETECTORS;
RADIATION DETECTORS;
|
EID: 0030216403
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/0168-9002(95)01404-7 Document Type: Article |
Times cited : (21)
|
References (21)
|