Comparison of radiation damage in silicon detectors induced by pions, protons and neutrons

Nuovo Cimento della Societa Italiana di Fisica A

Volumn 109, Issue 9, 1996, Pages 1351-1358

  Biggeri, U ^a   Borchi, E ^a   Bruzzi, M ^a   Candelori, A ^b   Giraldo, A ^b  

^a UNIVERSITY OF FLORENCE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040748084     PISSN: 03693546     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02773521     Document Type: Review

References (22)

1. STEVENSON G. R., Nucl. Phys. B (Proc. Suppl.), 32 (1993) 37.
2. WUNSTORF R. et al., Nucl. Instrum. Methods A, 315 (1992) 149.
3. LI Z., Nucl. Instrum. Methods A, 342 (1994) 105.
4. BIGGERI U., BORCHI E., BRUZZI M., LAZANU S. and LI Z., Type inversion measurements in irradiated silicon by means of Hall effect, presented at the Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, edited by A. BALDINI and E. FOCARDI, Vol. 46 (SIF, Bologna) 1994, pp. 115-121.
5. CHILINGAROV A et al., Nucl. Instrum. Methods A, 360 (1995) 342.
6. BORCHI E., BRUZZI M., BIGGERI U. and LAZANU S., this issue, p. 1333.
7. LI Z., IEEE Trans. Nucl. Sci., 42 (1995) 224.
8. eff reverse annealing using TSC/I-DLTS: relationship between neutron induced microscopic defects and silicon detector electrical degradations, presented at the VII European Symposium on Semiconductor Detectors, Elmau Germany, May 7-10 1995, to be published in Nucl. Instrum. Methods A.
9. CMS Technical Proposal, CERN/LHCC 94-38.
10. LEROY C. et al., Study of electrical properties and charge collection of silicon detectors under neutron, proton and gamma irradiations, presented at the IV International Conference on Calorimetry in High-Energy Physics, Isola d'Elba, Italy, 19-25 September 1993, CERN/ECP 93-12.
11. SIRAD COLLABORATION workshop on 19 September 1994.
12. AARNIO P. A. et al., Nucl. Instrum. Methods A, 335 (1993) 580.
13. TAVELET M. and LEON FLORIAN M. E., PSAIF: the PS-ACOL irradiation facility at CERN, presented at the Conference RADECS '91, Montpellier, France September 9-12 1991, IEEE catalog No. 91 TH 0400-2, p. 582, 1991.
14. BALDINI A. and BRUZZI M., Rev. Sci. Instrum., 64 (1993) 932.
15. BIGGERI U., BORCHI E., BRUZZI M., LAZANU S. and LI Z., IEEE Trans. Nucl. Sci., 41 (1994) 964.
16. BIGGERI U., BORCHI E., BRUZZI M. et al., The self-annealing effect on neutron irradiated silicon detectors investigated using TSC analysis, presented at the IV International Conference on Advanced Technology and Particle Physics, Como Italy, October 3-7 1994, Nucl. Phys. B (Proc. Suppl.), 44 (1995) 488.
17. LEMEILLEUR F. et al., Neutron proton and gamma irradiations of silicon detectors, presented at RADECS '93, St. Malo, France, 13-16 September 1993, CERN/ECP 93-8.
18. FEICK H., FRETWURST E., LINDSTROEM G. and MOLL M., Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons and pions, presented at the VII European Symposium on Semiconductor Detectors, Elmau Germany, May 7-10 1995, to be published on Nucl. Instrum. Methods A.
19. BALDINI A., BORCHI E., BRUZZI M. and SPILLANTINI P., Nucl. Instrum. Methods A, 315 (1992) 182.
20. BORCHI E. and BRUZZI M., Riv. Nuovo Cimento, 17 (1994) 20.
21. BRUZZI M., Nucl. Instrum. Methods A, 352 (1995) 618.
22. BIGGERI U., BORCHI E., BRUZZI M., LAZANU S. and LI Z., Self annealing effect on neutron irradiated silicon detectors by Hall effect analysis, presented at the Nuclear Science Symposium IEEE 95, S. Francisco, October 21-28 1995, IEEE Trans. Nucl. Sci., 43 (1996) 1599.