Metastable-atom-activated growth of an ultrathin carbonaceous resist for reactive ion etching of SiO2 and Si3N4

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1155-1160

  Thywissen, J H ^a   Johnson, K S ^a   Dekker, N H ^a   Prentiss, M ^a   Wong, S S ^b   Weiss, K ^c   Grunze, M ^c  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c UNIVERSITY OF HEIDELBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001438181     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (44)

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