Using neutral metastable argon atoms and contamination lithography to form nanostructures in silicon, silicon dioxide, and gold

Applied Physics Letters

Volumn 69, Issue 18, 1996, Pages 2773-2775

  Johnson, K S ^a,b   Berggren, K K ^a,b   Black, A ^a,b   Black, C T ^a,b   Chu, A P ^a,b   Dekker, N H ^a,b   Ralph, D C ^a,b   Thywissen, J H ^a,b   Younkin, R ^a,b   Tinkham, M ^a,b   Prentiss, M ^a,b   Whitesides, G M ^a,b  

^a HARVARD UNIVERSITY   (United States)

^b Department of Physics ^*

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000266265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117671     Document Type: Article

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