Demonstration of a nanolithographic technique using a self-assembled monolayer resist for neutral atomic cesium

Advanced Materials

Volumn 9, Issue 1, 1997, Pages 52-55

  Berggren, Karl K ^a   Younkin, Rebecca ^a   Cheung, Eunice ^a   Prentiss, Mara ^a   Black, Andrew J ^b   Whitesides, George M ^b   Ralph, Daniel C ^a   Black, Charles T ^a   Tinkham, Michael ^a  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CESIUM; ETCHING; GOLD; MASKS; MONOLAYERS; NANOSTRUCTURED MATERIALS; ORGANIC COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE;

ALKANETHIOLATES; NANOLITHOGRAPHY; REFLECTIVITY; SELF ASSEMBLED MONOLAYERS; SURFACE DAMAGE; WET CHEMICAL ETCHING;

LITHOGRAPHY;

EID: 0030815437     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.19970090111     Document Type: Article

References (17)

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6. K. S. Johnson, K. K. Berggren, A. J. Black, C. T. Black, A. P. Chu, N. H. Dekker, D. C. Ralph, J. H. Thywissen, R. Younkin, M. Prentiss, M. Tinkham, G. M. Whitesides, Appl. Phys. Lett., in press.
7. A. Bard, K. K. Berggren, J. L. Wilbur, J. D. Gillaspy, S. L. Rolston, J. J. McClelland, W. D. Phillips, M. Prentiss, G. M. Whitesides, unpublished.
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11. Diffraction does not play a role in neutral atom lithography because the de Broglie wavelength is ∼0.01 nm. Electron and ion beam lithography exploit the same advantage to make features as small as 5 nm.
12. Sodium atoms have also been used to pattern a SAM resist of hexadecanethiolate on a gold substrate. The pattern was subsequently transferred into the gold using a wet-chemical etch. H. Robinson, K. K. Berggren, H. Biebuyck, M. Prentiss, G. M. Whitesides, unpublished results.
13. K. S. Rails, R. A. Buhrman, R. C. Tiberio, Appl. Phys. Lett 1989, 55, 2459.
14. 3, and 1 M KOH; see Y. Xia, X.-M. Zhao, E. Kim, G. M. Whitesides, Chem. Mater. 1995, 12, 2332. For a discussion of the quality of the selectivity of SAMs against this etch, see also Y. Xia, X.-M. Zhao, G. M. Whitesides, Microelectron. Eng., in press.
15. 3, and 1 M KOH; see Y. Xia, X.-M. Zhao, E. Kim, G. M. Whitesides, Chem. Mater. 1995, 12, 2332. For a discussion of the quality of the selectivity of SAMs against this etch, see also Y. Xia, X.-M. Zhao, G. M. Whitesides, Microelectron. Eng., in press.
16. Prior to etching, exposed samples with millimeter-scale patterns of damage were analyzed using a SSX-100 (Surface Science) X-ray photoelectron spectrometer with an AlKα X-ray source, and an analyzer pass-energy of 150 e V. Both cesium and oxygen were observed in the exposed regions but not on the surrounding surface. Subsequent washing of the samples using water and EtOH significantly reduced both the Cs (3d5) and O (1s) photoelectron peak intensities. Differences in the C (1s), S (2s, 2p), and Au (4f) peak intensities between damaged and undamaged washed regions were not observed. K. K. Berggren, R. Younkin, E. Cheung, M. Prentiss, A. J. Black, G. M. Whitesides, unpublished results.
17. For a description of the design of the diode lasers used in these experiments see C. Wieman, L. Holberg, Rev. Sci. Instrum. 1991, 62, 1.