Observation of mid-gap states in GaN with optical-isothermal capacitance transient spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 549-554

  Hacke, P ^a   Mlyoshi, H ^a   Hiramatsu, K ^a   Okumura, H ^a   Yoshida, S ^a   Okushi, H ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOIONIZATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; OPTICAL-ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030644543     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (29)