Impact of defects on the carrier transport in GaN

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 763-767

  Fehrer, M ^a   Einfeldt, S ^a   Birkle, U ^a   Gollnik, T ^a   Hommel, D ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

Defects; GaN; Potential barriers; Silicon doping; Transport; Van der Pauw

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRON CYCLOTRON RESONANCE; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HALL EFFECT; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ELECTRON TRAPS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 4243793752     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00284-X     Document Type: Article

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