A novel approach to a tunneling lifetime calculation: The projected Green's function method

IEEE Journal of Quantum Electronics

Volumn 34, Issue 11, 1998, Pages 2179-2187

  Chan, K S ^a,b   Zhang, R Q ^b  

^a IEEE   (Hong Kong)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Heterostructures; Quantum wells; Tunneling devices; Tunneling heterostructures; Tunneling lifetime

Indexed keywords

CALCULATIONS; DESIGN; ELECTRON TUNNELING; GREEN'S FUNCTION; HETEROJUNCTIONS; OPTIMIZATION; RECURSIVE FUNCTIONS;

TUNNELING DEVICES; TUNNELING HETEROSTRUCTURES; TUNNELING LIFETIME;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032206019     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.726612     Document Type: Article

References (43)

1. A. M. Fox, D. A. B. Miller, G. Livescu, J. E. Cunningham, and W. Y. Jan, "Quantum well carrier sweep out: Relation to electroabsorption and exciton saturation," IEEE J. Quantum Electron., vol. 27, pp. 2281-2295, 1991.
2. 1-xAs quantum wells," IEEE J. Quantum Electron., vol. 30, pp. 1015-1026, 1994.
3. D. P. Halliday, D. Moss, S. Charbonneau, G. Aers, F. Chatenoud, and D. Landheer, "Time resolved photoluminescence studies in a reverse biased quantum well laser structure," Appl. Phys. Lett., vol. 61, pp. 2497-2499, 1992.
4. A. K. Ghatak, I. C. Goyal, aod R. L. Gallawa, "Mean lifetime calculation of quantum well structure: A rigorous analysis," IEEE J. Quantum Electron., vol. 26, pp. 305-310, 1990.
5. A. K. Ghatak, K. Thyagarjan, and M. R. Shenoy, "A novel numerical technique for solving the one-dimentional Schödinger equation using matrix approach-application to quantum well structures," IEEE J. Quantum Electron., vol. 24, pp. 1524-1531, 1988.
6. E. Anemogiannis, E. N. Glytsis, and T. K. Gaylord, "Quasibound states determination using a perturbed wavenumbers method in a large quantum box," IEEE J. Quantum Electron., vol. 33, pp. 742-752, 1997.
7. _, "Bound and quasibound state calculation for biased/unbiased semiconductor quantum heterostructures," IEEE J. Quantum Electron., vol. 29, pp. 2731-2740, 1993.
8. T. B. Bahder, C. A. Morrison, and J. D. Bruno, "Resonant level lifetime in GaAs/AlGaAs double-barrier structures," Appl. Phys. Lett., vol. 51, pp. 1089-1090, 1987.
9. T. Tada, A. Yamaguchi, T. Ninomiya, H. Uchiki, T. Kobayashi, and T. Yao, "Tunneling process in AlAs/GaAs double quantum wells studied by photoluminescence," J. Appl. Phys., vol. 63, pp. 5491-5494, 1988.
10. 0.47As/InP," Appl. Phys. Lett., vol. 55, pp. 885-887, 1989.
11. R. Ferreira, "Tunneling in double quantum wells with scatterings: A density matrix approach," Solid State Electron., vol. 40, pp. 425-427, 1996.
12. M. Habgn, A. Zrenner, G. Böhm, and G. Weimann, "Electric field induced exciton transport in coupled quantum well structures," Solid State Electron., vol. 40, pp. 429-431, 1996.
13. 0.65As double quantum wells," Phys. Rev. B, vol. 41, pp. 12295-1229, 1990.
14. 0.65As double quantum wells," Appl. Phys. Lett., vol. 55, pp. 2517-2519, 1989.
15. H. Vaupel, P. Thomas, O. Kuhn, V. May, K. Maschke, A. P. Heberle, W. W. Rühle, and K. Köhler, "Dissipative tunneling in asymmetric double-quantum-well systems: A coherence phenomenon," Phys. Rev. B, vol. 53, pp. 16531-16542, 1996.
16. 0.65As asymmetric double quantum wells," Appl. Phys. Lett., vol. 56, pp. 355-357, 1990.
17. S. Luryi, "Possibility of a direct observation of the time evolution in heterostructure barrier tunneling," Solid State Commun., vol. 65, pp. 787-789, 1989.
18. _, "Polarization oscillations in coupled quantum wells - A scheme for the generation of submillimeter electromagnetic waves," IEEE J. Quantum Electron., vol. 27, pp. 54-60, 1991.
19. H. Q. Hou and T. Y. Chang, "Nearly chirp-free electroabsorption modulation using InGaAs-InGaAlAs-InAlAs coupled quantum wells," IEEE Photon. Technol. Lett., vol. 7, pp. 167-169, 1995.
20. K. Berhard, A. Zrenner, G. Böhm, G. Trankle, and G. Weimann, "Charge transfer and electroabsorption in a electric field tunable double quantum well structure," Solid State Electron., vol. 37, pp. 1307-1310, 1994.
21. E. Dupont, D. Delacourt, V. Berger, N. Vodjdani, and M. Papuchon, "Phase and amplitude modulation based on intersubband transitions in electron transfer double quantum wells," Appl. Phys. Lett., vol. 62, pp. 1907-1909, 1993.
22. C. Van Hoof, J. Genoe, S. Raymond, and G. Borghs, "Giant optical bistable behavior using triple-barrier resonant tunneling light-emitting diodes," Appl. Phys. Lett., vol. 63, pp. 2390-2392, 1993.
23. K. Hess, "Real space transfer-generalized-approach to transport in confined geometries," Solid State Electron., vol. 31, pp. 319-324, 1988.
24. H. H. Tsai, Y. K. Su, H. H. Lin, R. L. Wang, and T. L. Lee, "P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature," IEEE Electron Device Lett., vol. 15, pp. 357-359, 1994.
25. J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchison, and A. Y. Cho, "Quantum cascade laser," Science, vol. 264, pp. 553-556, 1994.
26. C. Sirtori, J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, "Pulsed and continuous-wave operation of long wavelenght infrared (I = 9.3mm) quantum cascade lasers," IEEE J. Quantum Electron., vol. 33, pp. 89-93, 1997.
27. S. Luryi, "Frequency limit of double barrier resonant tunneling oscillators," Appl. Phys. Lett., vol. 47, pp. 490-492, 1985.
28. A. D. Stone and P. A. Lee, "Effect of inelastic processes on resonant tunneling in one dimension," Phys. Rev. Lett., vol. 54, pp. 1196-1199, 1985.
29. G. Arfkin, Mathematical Methods for Physicists, 2nd ed. New York: Academic, 1970, pp. 424-449.
30. G. Barton, Elements of Green's Functions and Propagation: Potentials, Diffusion and Waves. Oxford, U.K.: Oxford Univ., 1989, pp. 44-69.
31. R. Haydock, "The recursive solution of Schrödinger equation," in Solid State Physics, H. Ehrenreich, F. Seitz, and D. Turnbull, Eds., vol. 35, pp. 216-292, 1980.
32. D. G. Pettifor and D. L. Weaire, Eds., The Recursion Method and Its Applications, Berlin. Germany: Springer-Verlag, 1985.
33. S. Collins, D. Lowe, and J. R. Barker, "A dynamic analysis of resonant tunneling," J. Phys. C: Solid State Phys., vol. 20, pp. 6233-6243, 1987.
34. S. L. Chuang, Physics of Optoelctronic Devices. New York: Wiley, 1995, p. 84.
35. J. Singh and K. K. Bajaj, "Quantum mechanical theory of linewidths of localized radiative transitions in semiconductor alloys," Appl. Phys. Lett., vol. 48, pp. 1077-1079, 1986.
36. S. Hong and J. Singh, "Excitonic energies and inhomogeneous line broadening effects in InAIAs/InGaAs modulator structures," J. Appl. Phys., vol. 62, pp. 1994-1999, 1987.
37. H. N. Spector, J. Lee, and P. McIman, "Exciton linewidth in semiconducting quantum well structures," Phys. Rev. B, vol. 34, pp. 2554-2560, 1986.
38. 1-xAs multiple quantum wells venus electric field including exciton transition broadening effects in optical modulators," J. Appl. Phys., vol. 75, pp. 2618-2627, 1994.
39. M. Asada, "Intraband relaxation effect on optical spectra," in Quantum Well Lasers, P. S. Zory, Jr., Ed. London, U.K.: Academic, 1993, pp. 97-130.
40. M. Yamanishi and Y. Lee, "Phase dampings of optical dipole moments and gain spectra in semiconductor lasers," IEEE J. Quantum Electron., vol. QE-23, pp. 367-370, 1987.
41. T. Ohtoshi and M. Yamanishi, "Optical line shape functions in quantum well and quantum-wire structures," IEEE J. Quantum Electron., vol. 27, pp. 1630-1641, 1991.
42. D. Ahn, "Theory of non Markovian gain in strained-layer quantum well lasers with many-body effects," IEEE J. Quantum Electron., vol. 34, pp. 344-352, 1998.
43. M Asada, "Intraband relaxation time in quantum well lasers," IEEE J. Quantum Electron., vol. 25, pp. 2019-2026, 1989.