Comparative measurements of the electron emission behavior of Si3N4-InGaAs interfaces prepared by remote and direct PECVD

Journal of Electronic Materials

Volumn 25, Issue 9, 1996, Pages 1506-1513

  Parmiter, P J M ^a   Swanson, J G ^a  

^a KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

Interfaces; PECVD; Si3N4 InGaAs

Indexed keywords

EID: 0342702560     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655391     Document Type: Review

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