High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 12 B, 1997, Pages

  Mayer, Markus ^a   Pelzmann, Arthur ^a   Kamp, Markus ^a   Ebeling, Karl J ^a   Teisseyre, Henryk ^a   Nowak, Grzegorz ^a   Leszczynski, Mike ^a   Grzegory, Izabella ^a   Porowski, Sylvester ^a   Karczewski, Grzegorz ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; EPITAXIAL GROWTH; EXCITONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION;

LOW TEMPERATURE PHOTOLUMINESCENCE; SURFACE CRACKED AMMONIA;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031381195     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1634     Document Type: Article

References (12)