Homoepitaxial growth of GaN using molecular beam epitaxy

Journal of Applied Physics

Volumn 80, Issue 4, 1996, Pages 2195-2198

  Gassmann, A ^a   Suski, T ^a,d   Newman, N ^a   Kisielowski, C ^a   Jones, E ^a   Weber, E R ^a   Liliental Weber, Z ^b   Rubin, M D ^b   Helava, H I ^c   Grzagory, I ^d   Bockowski, M ^d   Jun, J ^d   Porowski, S ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c American Xtal Technology   (United States)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000851605     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363112     Document Type: Article

References (14)

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