SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 547-561

ECR-assisted MBE growth of in1-xGaxN heteroepitaxial films on Si

(5) Yodo, Tokuo a Kitayama, Yasunari a Miyaki, Kazunari a Yona, Hiroaki a Harada, Yoshiyuki a

a OSAKA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRON CYCLOTRON RESONANCE; ENERGY GAP; FILM GROWTH; IMPURITIES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHASE SEPARATION; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SILICON; THERMAL EFFECTS;

IN1-XGAXN ALLOY; ION DAMAGE; RESIDUAL O IMPURITIES;

INDIUM ALLOYS;

EID: 9944243131 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1016/j.spmi.2004.09.012 Document Type: Article

Times cited : (2)

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