Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2545-2548

  Yona, H ^a   Harada, Y ^a   Yodo, T ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE PLASMA; FILM CHARACTERISTICS; IMPURITY INCORPORATION; PLASMA-ASSISTED MBE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RESIDUAL IMPURITIES; SI(111) SUBSTRATE; SUBSTRATE BIAS VOLTAGES;

BIAS VOLTAGE; EPITAXIAL GROWTH; IONS; MOLECULAR BEAMS; NITRIDES; PLASMAS; SUBSTRATES;

ELECTRON CYCLOTRON RESONANCE;

EID: 9944235602     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303454     Document Type: Conference Paper

References (7)

1. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
2. T. Yodo, H. Yona, H. Ando, D. Nosei, and Y. Harada, Appl. Phys. Lett. 80, 968 (2002).
3. J. Wu, W. Walukiewicz, K. M. Yu, and J. E. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
4. T. Matsuoka, H. Okamoto, N. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
5. A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986).
6. T. Yodo, H. Tsuchiya, H. Ando, and Y. Harada, Jpn. J. Appl. Phys. 5A, 2523 (2000).
7. T. Yodo, H. Ando, D. Nosei, Y. Harada, and M. Tamura, J. Cryst. Growth 237-239, 1104 (2002).