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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2523-2529

Damage due to nitrogen molecular ions of GaN heteroepitaxial layers grown on Si(001) substrates by molecular beam epitaxy assisted by electron cyclotron resonance

(4) Yodo, Tokuo a Tsuchiya, Hironori a Ando, Hironori a Harada, Yoshinobu a

a OSAKA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Electron cyclotron resonance; Gallium nitride; Molecular ion damage; Plasma emission intensity; Si substrate

Indexed keywords

CRYSTAL DEFECTS; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; IONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITROGEN; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

GALLIUM NITRIDE; HETEROEPITAXY; PLASMA EMISSION;

SEMICONDUCTING FILMS;

EID: 0033703807 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2523 Document Type: Article

Times cited : (19)

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