Visible emissions near 2.2 eV from InN films grown on Si (111) and sapphire (0001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2802-2805

  Yodo, T ^a   Yona, H ^a   Harada, Y ^a   Sasaki, A ^b   Yoshimoto, M ^b  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; BURSTEIN-MOSS SHIFT; ELECTRON CYCLOTRONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROTATION DOMAIN; SINGLE-CRYSTALLINE FILM; VISIBLE EMISSIONS; X RAY ROCKING CURVE;

ENERGY GAP; EPITAXIAL GROWTH; MOLECULAR BEAMS; NITRIDES; SAPPHIRE; SILICON; ZINC SULFIDE;

ELECTRON CYCLOTRON RESONANCE;

EID: 9944232853     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303452     Document Type: Conference Paper

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