Simulation of transient enhanced diffusion of boron induced by silicon self-implantation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 8 PART A, 1997, Pages

  Uematsu, Masashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Boron; Interstitial clusters; Ostwald ripening; Silicon; Simulation; Transient enhanced diffusion

Indexed keywords

ANNEALING; BORON; DIFFUSION IN SOLIDS; DISSOLUTION; ION IMPLANTATION; MATHEMATICAL MODELS; REACTION KINETICS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

OSTWALD RIPENING; SELF INTERSTITIAL CLUSTERS; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0031200075     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l982     Document Type: Article

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