Nondestructive current localization upon high-current nanosecond switching of an avalanche transistor

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1988-1990

  Vainshtein, Sergey ^a   Yuferev, Valentin ^b   Kostamovaara, Juha ^a  

^a UNIVERSITY OF OULU   (Finland)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Bipolar transistor switches; Device reliability; High power switch; Impact ionization; Semiconductor device modeling

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; ELECTRIC WAVEFORMS; HIGH TEMPERATURE OPERATIONS; IMPACT IONIZATION; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SWITCHES;

AVALANCHE TRANSISTORS; BIPOLAR TRANSISTOR SWITCHES; DEVICE RELIABILITY; HIGH POWER SWITCH; NONDESTRUCTIVE CURRENT LOCALIZATION;

BIPOLAR TRANSISTORS;

EID: 0041910804     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.814984     Document Type: Article

References (7)

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